A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology
Contributo in Atti di convegno
Data di Pubblicazione:
2010
Citazione:
A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology / C. Calligaro, V. Liberali, A. Stabile, M. Bagatin, S. Gerardin, A. Paccagnella - In: 2010 International Conference on Microelectronics[s.l] : IEEE, 2010 Dec. - ISBN 9781612841496. - pp. 375-378 (( Intervento presentato al 22. convegno ICM : International conference on microelectronics tenutosi a Cairo nel 2010.
Abstract:
This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.
Tipologia IRIS:
03 - Contributo in volume
Keywords:
static RAM; radiation hardening by design
Elenco autori:
C. Calligaro, V. Liberali, A. Stabile, M. Bagatin, S. Gerardin, A. Paccagnella
Link alla scheda completa:
Titolo del libro:
2010 International Conference on Microelectronics