Characterization of an Associative Memory Chip in 28 nm CMOS Technology
Contributo in Atti di convegno
Data di Pubblicazione:
2018
Citazione:
Characterization of an Associative Memory Chip in 28 nm CMOS Technology / A. Annovi, G. Calderini, S. Capra, B. Checcucci, F. Crescioli, F. De Canio, G. Fedi, L. Frontini, M. Garci, C. Gentsos, T. Kubota, V. Liberali, F. Palla, J. Shojaii, C. Sotiropoulou, A. Stabile, G. Traversi, S. Viret (IEEE INTERNATIONAL CONFERENCE ON CIRCUITS AND SYSTEMS). - In: 2018 IEEE International Symposium on Circuits and Systems (ISCAS)[s.l] : IEEE, 2018. - ISBN 9781538648810. - pp. 1-5 (( convegno ISCAS tenutosi a Firenze nel 2018 [10.1109/ISCAS.2018.8351801].
Abstract:
This paper presents the characterization of the new Associative Memory chip (version 7) designed and fabricated in 28 nm CMOS. The design aims at: enhancing links from/to FPGAs; increasing bandwidth thanks to full custom LVDS transceivers; and reducing power consumption and silicon area by means of new memory cells designed with full-custom approach. The design was submitted in December 2016; the prototypes were fabricated and packaged in a 17 x 17 Ball Grid Array (BGA) standalone package. Prototype characterization confirms the chip functionality. The final chip will be assembled in a System In Package (SiP) together with a bare FPGA die.
Tipologia IRIS:
03 - Contributo in volume
Elenco autori:
A. Annovi, G. Calderini, S. Capra, B. Checcucci, F. Crescioli, F. De Canio, G. Fedi, L. Frontini, M. Garci, C. Gentsos, T. Kubota, V. Liberali, F. Palla, J. Shojaii, C. Sotiropoulou, A. Stabile, G. Traversi, S. Viret
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Titolo del libro:
2018 IEEE International Symposium on Circuits and Systems (ISCAS)