Layout-oriented simulation of on-destructive single event effects in CMOS IC blocks
Contributo in Atti di convegno
Data di Pubblicazione:
2009
Citazione:
Layout-oriented simulation of on-destructive single event effects in CMOS IC blocks / E. Do, V. Liberali, A. Stabile, C. Calligaro (ESA SP). - In: 2009 European Conference on Radiation and Its Effects on Components and SystemsPiscataway : IEEE, 2009 Sep. - ISBN 9781457704922. - pp. 217-224 (( Intervento presentato al 10. convegno European conference on radiation and its effects on components and systems : RADECS tenutosi a Bruges nel 2009 [10.1109/RADECS.2009.5994583].
Abstract:
This paper presents a tool based on a two dimensional charge-collection simulation to study non-destructive single event effects in CMOS IC blocks. The interaction between the radiation particle and the p-n junctions is modeled at circuit level with a set of parasitic currents, which are injected into the nodes corresponding to the geometrical areas at or near the point where the particle hits the IC. A drift-diffusion model is used to obtain parasitic currents waveforms. By means of circuit simulations, single event transients and single event upsets can be obtained for different collision positions. From simulation results, a map can be drawn, showing the sensitivity to single events of different layout regions. By comparing sensitivity maps, the designer can choose the most robust layout with respect to single event effects. Layout design guidelines are proposed to improve radiation hardness.
Tipologia IRIS:
03 - Contributo in volume
Keywords:
charge collection simulation; hardening by design; Radiation effects; single-event effects
Elenco autori:
E. Do, V. Liberali, A. Stabile, C. Calligaro
Link alla scheda completa:
Titolo del libro:
2009 European Conference on Radiation and Its Effects on Components and Systems