THE GROWTH OF THE Pt/Si (111) 7 x 7 INTERFACES AS PROBED BY Pt L3 SEXAFS

Articolo
Data di Pubblicazione:
1986
Citazione:
THE GROWTH OF THE Pt/Si (111) 7 x 7 INTERFACES AS PROBED BY Pt L3 SEXAFS / G. Rossi, D. Chandesris, P. Roubin, J. Lecante. - In: JOURNAL DE PHYSIQUE. COLLOQUE. - ISSN 0449-1947. - 47:12 (Supplement)(1986 Dec), pp. C-8.C 8 520-C-8.C-8 524. [10.1051/jphyscol:1986897]
Abstract:
SEXAFS and XARS on the Pt, L2, 3 edges for submonolayer and monolayer coverages on Si (111) 7 x 7 allow to recognize the growth mode of the Pt/Si silicide like interface, at room temperature. Chemisorption into sixfold interstitial sites in the top Si (111) double layer is followed by intermixing, and likely nucleation of Pt2Si coordinated clusters.
Tipologia IRIS:
01 - Articolo su periodico
Elenco autori:
G. Rossi, D. Chandesris, P. Roubin, J. Lecante
Autori di Ateneo:
ROSSI GIORGIO ( autore )
Link alla scheda completa:
https://air.unimi.it/handle/2434/802080
Link al Full Text:

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Settori


Settore FIS/03 - Fisica della Materia