Robustness of topological states in Bi2Se3 thin film grown by Pulsed Laser Deposition on (001)-oriented SrTiO3 perovskite
Articolo
Data di Pubblicazione:
2019
Citazione:
Robustness of topological states in Bi2Se3 thin film grown by Pulsed Laser Deposition on (001)-oriented SrTiO3 perovskite / C. Bigi, P. Orgiani, A. Nardi, A. Troglia, J. Fujii, G. Panaccione, I. Vobornik, G. Rossi. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 473(2019 Apr 15), pp. 190-193. [10.1016/j.apsusc.2018.12.119]
Abstract:
We report on the reproducible surface topological electron states in Bi2Se3 topological insulator thin films when epitaxially grown by Pulsed Laser Deposition (PLD) on (0 0 1)-oriented SrTiO3 (STO) perovskite substrates. Bi2Se3 has been reproducibly grown with single (0 0 1)-orientation and low surface roughness as controlled by ex-situ X-ray diffraction and in situ scanning tunnel microscopy and low-energy electron diffraction. Finally, in situ synchrotron radiation angle-resolved photo-emission spectroscopy measurements show a single Dirac cone and Dirac point at EB∼0.38 eV located in the center of the Brillouin zone likewise found from exfoliated single-crystals. These results demonstrate that the topological surface electron properties of PLD-grown Bi2Se3 thin films grown on (0 0 1)-oriented STO substrates open new perspectives for applications of multi-layered materials based on oxide perovskites.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
growth of perovskites; characterization of topological insulators; pulsed laser deposition
Elenco autori:
C. Bigi, P. Orgiani, A. Nardi, A. Troglia, J. Fujii, G. Panaccione, I. Vobornik, G. Rossi
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