Local atomic structure of a clean surface by surface extended x-ray absorption fine structure: Amorphized Si

The application of near-edge, surface, extended x-ray absorption fine structure to the study of a clean surface is reported. Direct evidence is found for surface recrystallization of ion-damaged (amorphized) Si, whereas no such evidence is seen for evaporated (amorphous) Si. The procedures described here are applicable to almost all clean or adsorbate-covered surfaces.