Data di Pubblicazione:
1993
Citazione:
Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7 / F. Sirotti, M. Desantis, X. Jin, G. Rossi. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 65-66:C(1993), pp. 800-805. (Intervento presentato al 6. convegno International Conf on solid films and surfaces tenutosi a Paris nel 1992) [10.1016/0169-4332(93)90759-5].
Abstract:
The electronic structure of the first stage of epitaxial growth of iron on Si(111)7 x 7 is investigated by photoelectron and soft X-ray absorption spectroscopy. The Fe/Si interfaces, obtained by means of solid-phase epitaxy, are studied for various coverages and as a function of the annealing temperature. These studies give some insight into the properties of the interface formation of FeSi2.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Beta-FESI2; phase; films; FESI2
Elenco autori:
F. Sirotti, M. Desantis, X. Jin, G. Rossi
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