Interaction of oxygen with silicon D-metal interfaces: a photoemission investigation

Synchrotron radiation measurements both from valence statesand core level from SI(111)-CU, SI(111)-AG, SI(111)-AU, SI(111)-PD interfaces have been carried out before and after exposure at room temperature to 30 * 10**6 L of oxygen and the authors compare the results with those for the oxidation of SI(111). In all cases the oxygen interacts with SI and notwith the metal, and the SI reaction rate is strongly increased with respect to that of SI(111). The strongest oxidationenhancement is obtained with CU and PD. The relevance of the results is discussed both in terms of the structure of theinterface and the nature of the chemical interaction between SI and D metals.