Data di Pubblicazione:
1983
Citazione:
Exploiting photon energy dependence in photoemission from Si(111)-Mo interface / G. Rossi, I. Abbati, L. Braicovich, I. Lindau, W.E. Spicer, U. del Pennino, S. Nannarone. - In: PHYSICA. B + C. - ISSN 0378-4363. - 117-118:Pt 2(1983 Mar), pp. 794-797. (Intervento presentato al 16. convegno Int Conf on the Phys of Semicond tenutosi a Montpellier nel 1982).
Abstract:
Synchrotron radiation photoemission data from Si(111)-Mo in the coverage range 0. 5-20. 5 monolayers are presented. Intermixing takes place at room temperature. The energy dependence of 4d photoemission cross section is used to discuss the nature of the chemical bond in the reacted region.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Engineering (all)
Elenco autori:
G. Rossi, I. Abbati, L. Braicovich, I. Lindau, W.E. Spicer, U. del Pennino, S. Nannarone
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