Data di Pubblicazione:
2014
Citazione:
A radiation hardened static RAM for high-energy physics experiments / S. Shojaii, A. Stabile, V. Liberali - In: 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014Piscataway : IEEE, 2014 May. - ISBN 9781479952953. - pp. 359-362 (( Intervento presentato al 29. convegno International conference on microelectronics (MIEL) tenutosi a Belgrade nel 2014.
Abstract:
This paper presents the design of a static RAM cell in 65 nm CMOS technology. A good level of radiation hardness against cumulative dose effects can easily achieved by using a 65 nm technology, as the oxide thickness is thin enough to provide intrinsic radiation hardness against total ionizing dose. Single event effects can be mitigated by using ad-hoc techniques. The SRAM is based on Dual Interlocked cells (DICE) to reduce the upset occurrence in the internal node of memory latches. Electrical simulations demonstrate a very good tolerance to single event effects.
Tipologia IRIS:
03 - Contributo in volume
Keywords:
radiation hardening; SRAM; dual interlocked cells
Elenco autori:
S. Shojaii, A. Stabile, V. Liberali
Link alla scheda completa:
Titolo del libro:
2014 29th International Conference on Microelectronics Proceedings - MIEL 2014