Data di Pubblicazione:
2006
Citazione:
A resonant drive circuit for GaN power MOSHFET / B. Wang, N. Tipirneni, M. Riva, A. Monti, G. Simin, E. Santi - In: Conference record of the 2006 IEEE industry applications conference : 41. IAS annual meeting : Tampa, Florida, USA, 8-12 october 2006.1Piscataway, NJ : IEEE, 2006 Oct. - ISBN 1-4244-0364-2. - pp. 364-368 (( Intervento presentato al 41. convegno IEEE industry applications conference : IEEE IAS annual meeting tenutosi a Tampa, Florida nel 2006.
Abstract:
The rapid development of the research on Gallium
Nitride semiconductor material and the unique properties of GaN
(such as high electron mobility and saturation velocity, high sheet
carrier concentration at hetero-junction interfaces, high
breakdown voltages, and low thermal- impedance) make the
material promising in high-power, high-temperature applications.
Accordingly, a design for a drive circuit for GaN switches is
increasingly in demand. Until now, however, specific gate drivers
for GaN switches are not available yet.
In this paper, a new resonant drive circuit for GaN power
MOSHFET switches is discussed. This circuit employs a resonant
LC tag to recover part of the power back into the voltage source in
order to reduce the power loss. It also applies a topology which can
increase the voltage level relative to the energy supply, generate
the zero and negative gate-source voltages required to turn the
GaN MOSHFET on and off, and make the circuit highly tolerant
to input signal timing variance. This function reduces the overall
power consumed in the driver and thus reduces the power loss.
This is particularly important for high-frequency driver operation,
to take full advantage of the superior switching speed of GaN
devices.
In this paper, the topology of the low-power-loss, high-speed drive
circuit will be introduced and the simulation results will be
discussed.
Tipologia IRIS:
03 - Contributo in volume
Keywords:
GaN MOSHFET ; resonant drive circuit ; high speed
Elenco autori:
B. Wang, N. Tipirneni, M. Riva, A. Monti, G. Simin, E. Santi
Link alla scheda completa:
Titolo del libro:
Conference record of the 2006 IEEE industry applications conference : 41. IAS annual meeting : Tampa, Florida, USA, 8-12 october 2006.1