Data di Pubblicazione:
2003
Citazione:
Origin of the broadening of surface optical transitions of
As-rich and Ga-rich GaAs(001) / D. Paget, O.E. Tereshchenko, A.B. Gordeeva, V.L. Berkovits, G. Onida. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 529:1-2(2003), pp. 204-214. [10.1016/S0039-6028(03)00264-4]
Abstract:
We have investigated the temperature dependence of the reflectance anisotropy spectra of clean GaAs(001), with a particular emphasis on the width of the spectral features related to surface optical transitions. Fundamental differences between the characteristic lines of the Ga-rich and As-rich surfaces have been found. For the gallium-rich surface, the dependence of width of the main negative line at 2.3 eV between 90 and 700 K can be explained by the electron-phonon coupling. This width is found to be reduced by adsorption of minute amounts of cesium. For the As-rich surface, the width of the line at 3 eV weakly depends on temperature, and its value can be interpreted by dispersion in k-space.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Gallium arsenide; Phonons; Reflection spectroscopy
Elenco autori:
D. Paget, O.E. Tereshchenko, A.B. Gordeeva, V.L. Berkovits, G. Onida
Link alla scheda completa: