Data di Pubblicazione:
1989
Citazione:
Atomic geometry at the CoSi2/Si (111) interface / A. Santaniello, P. Depadova, X. Jin, D. Chandesris, G. Rossi. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICS PROCESSING AND PHENOMENA. - ISSN 0734-211X. - 7:4(1989), p. 1017. [10.1116/1.584793]
Abstract:
We present a polarization‐dependent Co K‐edge SEXAFS investigation on the local atomic geometry around Co atoms at the interface between epitaxial CoSi2 and Si(111). The Co interface atoms are found to be coordinated with eight Si atoms at CoSi2‐like bond lengths.
Tipologia IRIS:
01 - Articolo su periodico
Elenco autori:
A. Santaniello, P. Depadova, X. Jin, D. Chandesris, G. Rossi
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