Interplay between morphology and magnetoelectric coupling in Fe/PMN-PT multiferroic heterostructures studied by microscopy techniques
Articolo
Data di Pubblicazione:
2020
Citazione:
Interplay between morphology and magnetoelectric coupling in Fe/PMN-PT multiferroic heterostructures studied by microscopy techniques / F. Motti, G. Vinai, V. Bonanni, V. Polewczyk, P. Mantegazza, T. Forrest, F. Maccherozzi, S. Benedetti, C. Rinaldi, M. Cantoni, D. Cassese, S. Prato, S.S. Dhesi, G. Rossi, G. Panaccione, P. Torelli. - In: PHYSICAL REVIEW MATERIALS. - ISSN 2475-9953. - 4:11(2020 Nov 25), pp. 114418.114418-1-114418.114418-11. [10.1103/PhysRevMaterials.00.004400]
Abstract:
A ferromagnetic (FM) thin film deposited on a substrate of Pb(Mg1/3Nb2/3)1−xTixO3 (PMN-PT) is an appealing heterostructure for the electrical control of magnetism, which would enable non-volatile memories with ultra-low power consumption. Reversible and electrically controlled morphological changes at the surface of PMN-PT suggest that the magnetoelectric effects are more complex than the commonly used "strain-mediated’’ description. Here we show that changes in substrate morphology intervene in magnetoelectric coupling as a key parameter interplaying with strain. Magnetic-sensitive microscopy techniques are used to study magnetoelectric coupling in Fe/PMN-PT at different length scales, and compare different substrate cuts.~The observed rotation of the magnetic anisotropy is connected to the changes in morphology, and mapped in the crackpattern at the mesoscopic scale. Ferroelectric polarization switching induces a magnetic field-free rotation of the magnetic domains at m scale, with a wide distribution of rotation angles. Our results show that the relationship between the rotation of the magnetic easy axis and the rotation of the in-plane component of the electric polarization is not straightforward, as well as the relationship between ferroelectric domains and crack pattern. The understanding and control of this phenomenon is crucial to develop functional devices based on FM/PMN-PT heterostructures.Ferroelectric polarization switching induces a magnetic field-free rotation of the magnetic domains at μm scale, with a wide distribution of rotation angles. Our results show that the relationship between the rotation of the magnetic easy axis and the rotation of the in-plane component of the electric polarization is not straightforward, as well as the relationship between ferroelectric domains and crack pattern. The understanding and control of this phenomenon is crucial to develop functional devices based on FM/PMN-PT heterostructures.
Tipologia IRIS:
01 - Articolo su periodico
Elenco autori:
F. Motti, G. Vinai, V. Bonanni, V. Polewczyk, P. Mantegazza, T. Forrest, F. Maccherozzi, S. Benedetti, C. Rinaldi, M. Cantoni, D. Cassese, S. Prato, S.S. Dhesi, G. Rossi, G. Panaccione, P. Torelli
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