Data di Pubblicazione:
2012
Citazione:
Characterization of Er in porous Si / G. Mula, S. Setzu, G. Manunza, R. Ruffilli, A. Falqui. - In: NANOSCALE RESEARCH LETTERS. - ISSN 1931-7573. - 7:1(2012 Jul), pp. 376.1-376.9. [10.1186/1556-276X-7-376]
Abstract:
The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Er doping; Light-emitting devices; Porous silicon; Refractive index
Elenco autori:
G. Mula, S. Setzu, G. Manunza, R. Ruffilli, A. Falqui
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