Analysis of Metal-Insulator Crossover in Strained {SrRuO}3 Thin Films by X-ray Photoelectron Spectroscopy

The electronic properties of ultrathin epitaxial films of strontium ruthenate SrRuO3 perovskite oxide are modified by epitaxial strain, as determined by growing by pulsed laser deposition, on different the substrates. Electron transport measurements indicated that tensile strain deformation of the SrRuO3 unit cell reduces the metallicity of the material and reduces the metal-insulator-transition (MIT) temperatures. The shrinkage of the Ru-O-Ru buckling angle due to compressive strain is counterweighted by the increased overlap of the conduction Ru-4d orbitals with the O-2p ones due to the smaller interatomic distances resulting into an increased MIT temperature, i.e. a more conducting material. In the more metallic samples the core level x-ray photoemission spectroscopy lineshapes show the occurrence of an extra-peak at the lower binding energies of the main Ru-3d peaks that is attributed to screening, as observed in volume sensitive photoemission of the unstrained material.