Data di Pubblicazione:
1990
Citazione:
BIS investigation of Pdsingle bondSi(111)7 × 7 interface formation / J.Y. Veuillen, T.T. Nguyen, R. Cinti, S. D'Addato, S. Turchini, S. Nannarone, A. Santaniello, G. Rossi. - In: VACUUM. - ISSN 0042-207X. - 41:1-3(1990), pp. 702-704. ((Intervento presentato al convegno 11th International VACUUM Congress( ICV-11 )- 7th International Conf. on solid surface( ICSS-7 ) tenutosi a Cologne nel 1989.
Abstract:
A combined BIS-XPS study of the PdSi(111)7 × 7 interface formation is presented. A Pd2Si-like distribution of partial d density of empty states is found starting from the early stages of SiPd bond formation.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Instrumentation; Condensed Matter Physics; Surfaces, Coatings and Films
Elenco autori:
J.Y. Veuillen, T.T. Nguyen, R. Cinti, S. D'Addato, S. Turchini, S. Nannarone, A. Santaniello, G. Rossi
Link alla scheda completa: