Role of oxygen deposition pressure in the formation of Ti3+ defect states in TiO2 (001) anatase thin films
Articolo
Data di Pubblicazione:
2017
Citazione:
Role of oxygen deposition pressure in the formation of Ti3+ defect states in TiO2 (001) anatase thin films / B. Gobaut, P. Orgiani, E.D. Gennaro, A. Sambri, C. Aruta, F. Borgatti, V. Lollobrigida, D. Céolin, J. Rueff, R. Ciancio, C. Bigi, J. Fujii, D. Krizmancic, P. Torelli, I. Vobornik, G. Rossi, F.M. Granozio, U.S.D. Uccio, G. Panaccione. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 9:27(2017 Jul 12), pp. 23099-23106. [10.1021/acsami.7b03181]
Abstract:
We report the study of anatase TiO2 (001)-oriented thin films grown by pulsed laser deposition on LaAlO3 (001). A combination of in situ and ex situ methods have been used to address both the origin of the Ti3+ localized states and their relationship with structural and electronic properties at surface and subsurface. Localized in-gap state are analyzed by resonant x-ray photoelectron spectroscopy and related to Ti3+ electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase of the oxygen pressure corresponds to an increase of Ti3+ only in a well-defined range of deposition pressure; outside of this range Ti3+ as well as the strength of the in-gap states, are reduced.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
anatase, oxygen vacancies, resonant photoemission, in-gap state, shear planes, interdiffusion, defects
Elenco autori:
B. Gobaut, P. Orgiani, E.D. Gennaro, A. Sambri, C. Aruta, F. Borgatti, V. Lollobrigida, D. Céolin, J. Rueff, R. Ciancio, C. Bigi, J. Fujii, D. Krizmancic, P. Torelli, I. Vobornik, G. Rossi, F.M. Granozio, U.S.D. Uccio, G. Panaccione
Link alla scheda completa:
Link al Full Text:
Progetto: