Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies
Contributo in Atti di convegno
Data di Pubblicazione:
2021
Citazione:
Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies / S. Achilli, N.H. Le, G. Fratesi, N. Manini, G. Onida, M. Turchetti, G. Ferrari, T. Shinada, T. Tanii, E. Prati (IEEE SILICON NANOELECTRONICS WORKSHOP). - In: SNW[s.l] : Institute of Electrical and Electronics Engineers (IEEE), 2021. - ISBN 978-4-86348-781-9. - pp. 87-88 (( Intervento presentato al 26. convegno Silicon Nanoelectronics Workshop : June, 13th nel 2021 [10.1109/SNW51795.2021.00045].
Abstract:
We demonstrate the possibility to functionalize silicon vacancies through single ion implantation of Ge atoms, forming stable GeV complexes, to achieve position control of the defects and electronic properties suitable for room temperature operations. The quantum transport-measurements, supported by theoretical calculations, evidences differences compared to conventional dopants, concerning the effect of disorder and temperature on the conductivity.
Tipologia IRIS:
03 - Contributo in volume
Elenco autori:
S. Achilli, N.H. Le, G. Fratesi, N. Manini, G. Onida, M. Turchetti, G. Ferrari, T. Shinada, T. Tanii, E. Prati
Link alla scheda completa:
Titolo del libro:
SNW