Data di Pubblicazione:
2011
Citazione:
Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability? / X. Jehl, B. Roche, M. Sanquer, B. Voisin, R. Wacquez, V. Deshpande, B. Previtali, M. Vinet, J. Verduijn, G. Tettamanzi, S. Rogge, D. Kotekar-Patil, M. Ruoff, D. Kern, D. Wharam, M. Belli, E. Prati, M. Fanciulli. - In: PROCEDIA COMPUTER SCIENCE. - ISSN 1877-0509. - 7:(2011), pp. 266-268. ((Intervento presentato al 2. convegno FET European Future Technologies Conference and Exhibition : May, 4th - 6th tenutosi a Budapest nel 2011 [10.1016/j.procs.2011.09.016].
Abstract:
It is very important to study variability of nanodevices because the inability to produce large amounts of identical nanostructures is eventually a bottleneck for any application. In fact variability is already a major concern for CMOS circuits. In this work we report on the variability of dozens of silicon single-electron transistors (SETs). At room temperature their variability is compared with the variability of the most advanced CMOS FET i.e. the ultra thin Silicon-on-Insulator Multiple gate FET (UT SOI MuGFET). We found that dopants diffused from Source -Drain into the edge of the undoped channel are the main source of variability. This emphasizes the role of extrinsic factors like the contact junctions for variability of any nanodevice.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Nanodevices; Single electron transistor; Variability;
Elenco autori:
X. Jehl, B. Roche, M. Sanquer, B. Voisin, R. Wacquez, V. Deshpande, B. Previtali, M. Vinet, J. Verduijn, G. Tettamanzi, S. Rogge, D. Kotekar-Patil, M. Ruoff, D. Kern, D. Wharam, M. Belli, E. Prati, M. Fanciulli
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