Data di Pubblicazione:
2006
Citazione:
Effect of the triplet state on the random telegraph signal in Si n-MOSFETs / E. Prati, F. M., G. Ferrari, S. M.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 74:3(2006 Jul 25), pp. 033309.033309-1-033309.033309-4. [10.1103/PhysRevB.74.033309]
Abstract:
We report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude when the field increases from 0 to 12 T. Similar behavior is found when the static field is either in plane or perpendicular to the two-dimensional electron gas. The experimental data deviate from a pure exponential trend and can be explained by considering a model that includes the triplet state of the trapping center and the polarization of the channel electron gas.
Tipologia IRIS:
01 - Articolo su periodico
Elenco autori:
E. Prati, F. M., G. Ferrari, S. M.
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