Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors
Articolo
Data di Pubblicazione:
2008
Citazione:
Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors / E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 103:12(2008 Jun 15), pp. 123707.123707-1-123707.123707-3. [10.1063/1.2939272]
Abstract:
We report on the current fluctuations of random telegraph signal experimentally observed at cryogenic temperatures in ordinary submicron Si/SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs). A giant drain current fluctuation Delta I/I up to 55% is observed at sub-Kelvin temperature in samples with a large channel width. The current variation is compatible with predictions for decanano MOSFETs at room temperature. The similarity suggests the formation of a quasi-one-dimensional conduction channel at gate voltages sufficiently close to the threshold voltage.
Tipologia IRIS:
01 - Articolo su periodico
Elenco autori:
E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro
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