Data di Pubblicazione:
2009
Citazione:
Sample variability and time stability in scaled silicon nanowires / M. Pierre, X. Jehl, R. Wacquez, M. Vinet, M. Sanquer, M. Belli, E. Prati, M. Fanciulli, J. Verduijn, G.C. Tettamanzi, G.P. Lansbergen, S. Rogge, M. Ruoff, M. Fleischer, Wharam, D, Kern, D - In: 2009 10th International Conference on Ultimate Integration of Silicon[s.l] : IEEE, 2009. - ISBN 978-1-4244-3704-7. - pp. 249-252 (( Intervento presentato al 10. convegno International Conference on Ultimate Integration on Silicon tenutosi a Aachen nel 2009 [10.1109/ULIS.2009.4897583].
Abstract:
We explain variability observed for the resonant tunnelling transport through donors in scaled silicon nanowires by the influence of charge configuration changes at the edges between the channel and the source-drain regions. This charge configuration is remarkably robust with respect to ageing effects, thermal cycling and the associated Id-Vg characteristics at low temperature constitute a real "electro-fingerprint" for the samples. This stability is prerequisite for applications based on the gate control of single donor orbitals in nanoscale CMOS devices [1-2]
Tipologia IRIS:
03 - Contributo in volume
Elenco autori:
M. Pierre, X. Jehl, R. Wacquez, M. Vinet, M. Sanquer, M. Belli, E. Prati, M. Fanciulli, J. Verduijn, G.C. Tettamanzi, G.P. Lansbergen, S. Rogge, M. Ruoff, M. Fleischer, Wharam, D, Kern, D
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Titolo del libro:
2009 10th International Conference on Ultimate Integration of Silicon