Data di Pubblicazione:
2008
Citazione:
All-optical determination of initial oxidation of Si(100) and its kinetics / N. Witkowski, K. Gaál-Nagy, F. Fuchs, O. Pluchery, A. Incze, F. Bechstedt, Y. Borensztein1, G. Onida, R. Del Sole. - In: THE EUROPEAN PHYSICAL JOURNAL. B, CONDENSED MATTER PHYSICS. - ISSN 1434-6028. - 66:4(2008), pp. 427-431.
Abstract:
By comparison of measured and ab initio calculated surface optical spectra we demonstrate that two main oxidation processes initially occur after dissociation of oxygen molecules, forming in both cases Si–O–Si entities: (i) breaking of Si dimers by incorporation of oxygen atoms; (ii) incorporation into the silicon backbonds. The kinetics up to half-monolayer coverage is determined, and explained in terms of Langmuir-like adsorption mechanisms with different probabilities.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
optical properties ; surface states ; band structure ; electron density of states ; adsorption kinetics
Elenco autori:
N. Witkowski, K. Gaál-Nagy, F. Fuchs, O. Pluchery, A. Incze, F. Bechstedt, Y. Borensztein1, G. Onida, R. Del Sole
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