Data di Pubblicazione:
1981
Citazione:
Exploiting energy-dependent photoemission in Si d-metal interfaces: the Si(111)-Pd case / I. Abbati, G. Rossi, I. Lindau, W.E. Spicer. - In: THE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. - ISSN 0022-5355. - 19:3(1981), pp. 636-640. ((Intervento presentato al 8. convegno Annual Conference on the Phys of Compd Semicond Interfaces tenutosi a Williamsburg nel 1981 [10.1116/1.571077].
Abstract:
The authors present a synchrotron radiation photoemission results from Si(111) with increasing Pd coverages theta (in monolayer units from 0. 5 to 23 monolayers). The authors have measured photoemission spectra in the Cooper minimum for the Pd 4d electrons (hv equals 130 ev) and outside this region (hv equals 80 ev) where the d emission is strong. By comparing the two cases, one obtains information on the Si(sp) and Pd(d) states. Making use of this, a discussion is presented regarding the coverage dependence of the spectra in connection with the nature of the chemical bond between Si and Pd and the structure of the Si-silicide interface.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Engineering (all)
Elenco autori:
I. Abbati, G. Rossi, I. Lindau, W.E. Spicer
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