Reactive germanium/transition metal interfaces investigated with synchrotron radiation photoemission: Ge/Ni and Ge/Pd
Articolo
Data di Pubblicazione:
1981
Citazione:
Reactive germanium/transition metal interfaces investigated with synchrotron radiation photoemission: Ge/Ni and Ge/Pd / I. Abbati, G. Rossi, L. Braicovich, I. Lindau, W.E. Spicer. - In: APPLICATIONS OF SURFACE SCIENCE. - ISSN 0378-5963. - 9:1-4(1981), pp. 243-249.
Abstract:
We report the first photoemission studies of the electronic structure at the interface between Ge(111) and d-metal overlayers at monolayer coverages. Two systems are discussed, Ge(111)/Pd and Ge(111)/Ni. In the case of Ge(111)/Pd a broad, reacted germanide-like phase is formed with similar electronic features to the Si(111)/Pd interface. In the Ge(111) Ni case an evolution of the valence band structure versus coverage from a reacted situation to a metal rich situation is found, indicating a strong gradient of concentration. The interface is narrower than for Ge/Pd. Photoemission spectra of the valence band at hv=80 eV are presented as well as core line data of the Ge 3d which show the trends in binding energy shifts and the changes in the relative intensities as a function of metal coverage. The discussion is carried out on the differences in the growth of these interfaces and comparisons are made to the correspondent silicide/metal systems.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Engineering (all)
Elenco autori:
I. Abbati, G. Rossi, L. Braicovich, I. Lindau, W.E. Spicer
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