X-ray absorption resonance spectroscopy as a local probe of the electronic structure at metal-semiconductor interfaces and silicide: Pt/Si, Pd/Si, and Yb/Si
Articolo
Data di Pubblicazione:
1986
Citazione:
X-ray absorption resonance spectroscopy as a local probe of the electronic structure at metal-semiconductor interfaces and silicide: Pt/Si, Pd/Si, and Yb/Si / G. Rossi, P. Roubin, D. Chandesris, J. Lecante. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 168:1-3(1986), pp. 787-794. [10.1016/0039-6028(86)90910-6]
Abstract:
Measurement of the distribution of the empty band states is one of the key problems for reaching a more complete understanding of the electronic structure of metal/semiconductor systems. X-ray absorption resonance on transition-metal (TM) L2,3edges are a probe of the presence and of the approximate distribution of d-like empty states. The results provide evidence of the existence of empty antibonding d-like states in the electronic structure of near-noble-metal/silicon interfaces and silicides; Yb L2.3resonances provide evidence of mixed valency in the Yb/Si system even for thin underreacted Yb/Si interfaces.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Condensed Matter Physics; Surfaces and Interfaces; Surfaces, Coatings and Films; Materials Chemistry2506 Metals and Alloys
Elenco autori:
G. Rossi, P. Roubin, D. Chandesris, J. Lecante
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