Data di Pubblicazione:
1994
Citazione:
Electron states of interface iron silicides on Si(111)7×7 / F. Sirotti, M. Desantis, X. Jin, G. Rossi. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 49:16(1994), pp. 11134-11143.
Abstract:
Solid-phase epitaxy of iron silicides on Si(111)7×7 substrates is studied by comparing photoemission spectroscopy of the extended states and core levels, and Fe L2,3 x-ray-absorption spectroscopy, for the interface phases and the bulk stoichiometric silicides. Epitaxial growth favors the low-temperature formation of metallic tetragonal α-FeSi2 which starts decomposing irreversibly into semiconducting orthorhombic β-FeSi2 at above 600°C. This interface chemistry is opposite to the bulk phase diagram where the α phase is the high-temperature stable disilicide which reversibly transforms into the β phase when the temperature is lowered to 950°C. No evidence of metastable interface phases other than the bulk phases is found. The coexistence of bulk epitaxial phases over an extended temperature range indicates that local properties of the interface strongly influence the silicide phase transitions.
Tipologia IRIS:
01 - Articolo su periodico
Keywords:
Condensed Matter Physics
Elenco autori:
F. Sirotti, M. Desantis, X. Jin, G. Rossi
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