Data di Pubblicazione:
2011
Citazione:
Valence band structure of the Si(331)-(12x1) surface reconsctruction / C. Battaglia, E.F. Schwier, C. Monney, C. Didiot, N. Mariotti, K. Gaal-Nagy, G. Onida, M.G. Garnier, P. Aebi. - In: JOURNAL OF PHYSICS. CONDENSED MATTER. - ISSN 0953-8984. - 23:13(2011), pp. 135003.135003.1-135003.135003.5. [10.1088/0953-8984/23/13/135003]
Abstract:
Using angle-resolved photoelectron spectroscopy we investigate the electronic valence band structure of the Si(331)-(12 × 1) surface reconstruction for which we recently proposed a structural model containing silicon pentamers as elementary structural building blocks. We find that this surface, reported to be metallic in a previous study, shows a clear band gap at the Fermi energy, indicating semiconducting behavior. An occupied surface state, presumably containing several spectral components, is found centered at − 0.6 eV exhibiting a flat energy dispersion. These results are confirmed by scanning tunneling spectroscopy and are consistent with recent first-principles calculations for our structural model.
Tipologia IRIS:
01 - Articolo su periodico
Elenco autori:
C. Battaglia, E.F. Schwier, C. Monney, C. Didiot, N. Mariotti, K. Gaal Nagy, G. Onida, M.G. Garnier, P. Aebi
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